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MMSF60R360QTH

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The MMSF60R360QTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 7 to 11 A, Drain Source Resistance 0.32 to 0.36 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MMSF60R360QTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMSF60R360QTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 19.0 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 to 11 A
  • Drain Source Resistance
    0.32 to 0.36 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    19.0 nC
  • Switching Speed
    18 to 110 ns
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220SF
  • Applications
    PFC Power Supply Stages, Switching Applications, Adapter

Technical Documents
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