The SICW028N120A4 from Micro Commerical Components is an N-Channel SiC MOSFET that has been designed to offer high blocking voltage while maintaining low on-resistance in a rugged package. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2 V, and a drain-source on-resistance of 28 milli-ohms. This MOSFET has a continuous drain current of up to 80 A and a pulsed drain current of less than 320 A. It has a power dissipation of 375 W. This MOSFET is manufacturing using SiC technology and offers avalanche ruggedness over the operating temperature range. It meets the UL 94 V-0 flammability rating requirements for high reliability. This SiC MOSFET is available in a through-hole package that measures 15.75 x 4.80 mm and is ideal for motor drives, battery chargers, solar inverters, switch-mode power supplies, and high voltage DC-DC conversion applications.