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APT1004R2BN

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The APT1004R2BN from Microchip Technology is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 4200 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for APT1004R2BN can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT1004R2BN
  • Manufacturer
    Microchip Technology
  • Description
    1000 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    4200 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    35 to 55 nC
  • Power Dissipation
    180 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247

Technical Documents
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