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APT106N60B2C6

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The APT106N60B2C6 from Microchip Technology is a MOSFET with Continous Drain Current 106 A, Drain Source Resistance 35 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for APT106N60B2C6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT106N60B2C6
  • Manufacturer
    Microchip Technology
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    106 A
  • Drain Source Resistance
    35 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    308 nC
  • Power Dissipation
    883 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    T-MAX

Technical Documents
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