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APT10M09B2VFR

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The APT10M09B2VFR from Microchip Technology is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 9 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for APT10M09B2VFR can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT10M09B2VFR
  • Manufacturer
    Microchip Technology
  • Description
    100 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    9 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    350 nC
  • Power Dissipation
    625 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    T-MAX

Technical Documents
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