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NXV100XP

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NXV100XP Image

The NXV100XP from Nexperia is a MOSFET with Continous Drain Current -1.5 to -0.95 A, Drain Source Resistance 104 to 250 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.9 to -0.5 V. Tags: Surface Mount. More details for NXV100XP can be seen below.

Product Specifications

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Product Details

  • Part Number
    NXV100XP
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 4.2 to 6.4 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.5 to -0.95 A
  • Drain Source Resistance
    104 to 250 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.9 to -0.5 V
  • Gate Charge
    4.2 to 6.4 nC
  • Power Dissipation
    0.34 to 2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
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