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APT10M19BVR

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APT10M19BVR Image

The APT10M19BVR from Microchip Technology is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 19 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for APT10M19BVR can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT10M19BVR
  • Manufacturer
    Microchip Technology
  • Description
    100 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    19 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    200 to 300 nC
  • Power Dissipation
    370 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247

Technical Documents
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