APT34M60S

Note : Your request will be directed to Microchip Technology.

APT34M60S Image

The APT34M60S from Microchip Technology is a MOSFET with Continous Drain Current 36 A, Drain Source Resistance 190 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for APT34M60S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    APT34M60S
  • Manufacturer
    Microchip Technology
  • Description
    600 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36 A
  • Drain Source Resistance
    190 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    165 nC
  • Power Dissipation
    624 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D3PAK
  • Applications
    PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters

Technical Documents

Latest MOSFETs

View more products