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APT66M60B2

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APT66M60B2 Image

The APT66M60B2 from Microchip Technology is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 90 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for APT66M60B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT66M60B2
  • Manufacturer
    Microchip Technology
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 A
  • Drain Source Resistance
    90 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    330 nC
  • Power Dissipation
    1135 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    T-MAX

Technical Documents
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