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MSC360SMA120B

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The MSC360SMA120B from Microchip Technology is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 360 to 450 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 23 V, Gate Source Threshold Voltage 1.9 to 3.14 V. Tags: Through Hole. More details for MSC360SMA120B can be seen below.

Product Specifications

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Product Details

  • Part Number
    MSC360SMA120B
  • Manufacturer
    Microchip Technology
  • Description
    1200 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    360 to 450 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 23 V
  • Gate Source Threshold Voltage
    1.9 to 3.14 V
  • Gate Charge
    21 nC
  • Power Dissipation
    78 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    PV inverter, converter, and industrial motor drives, Smart grid transmission and distribution, Induction heating and welding, H/EV powertrain and EV charger, Power supply and distribution

Technical Documents
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