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114N60A

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The 114N60A from MOSPEC SEMICONDUCTOR is a MOSFET with Continous Drain Current 72 to 114 A, Drain Source Resistance 3.8 to 5.5 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.2 V. Tags: Through Hole. More details for 114N60A can be seen below.

Product Specifications

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Product Details

  • Part Number
    114N60A
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    60 V, 72 to 114 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    72 to 114 A
  • Drain Source Resistance
    3.8 to 5.5 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.2 V
  • Gate Charge
    58.2 to 116 nC
  • Switching Speed
    19.2 to 200 ns
  • Power Dissipation
    183 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PowerTools, Quick Charger, LED applications, Motor Drive Applications
  • Note
    Input Capacitance :- 10000 pF

Technical Documents
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