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135N100A

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The 135N100A from MOSPEC SEMICONDUCTOR is a MOSFET with Continous Drain Current 85 to 135 A, Drain Source Resistance 3.4 to 4.1 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for 135N100A can be seen below.

Product Specifications

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Product Details

  • Part Number
    135N100A
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    100 V, 85 to 135 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    85 to 135 A
  • Drain Source Resistance
    3.4 to 4.1 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    56 to 85 nC
  • Switching Speed
    20 to 70 ns
  • Power Dissipation
    240 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Networking, Load Switch, LED applications, Quick Charger
  • Note
    Input Capacitance :- 5650 pF

Technical Documents
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