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G3F135MT12J

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The G3F135MT12J from Navitas Semiconductor is a MOSFET with Continous Drain Current 9 to 18 A, Drain Source Resistance 135 to 245 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 22 V, Gate Source Threshold Voltage 2.2 to 4.3 V. Tags: Surface Mount. More details for G3F135MT12J can be seen below.

Product Specifications

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Product Details

  • Part Number
    G3F135MT12J
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 9 to 18 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 to 18 A
  • Drain Source Resistance
    135 to 245 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    2.2 to 4.3 V
  • Gate Charge
    27 nC
  • Power Dissipation
    87 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Applications
    xEV DC-DC, Solar/PV, Energy Storage Systems, Uninterruptible Power Supply, Motor Control

Technical Documents
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