The G3F25MT06L from Navitas Semiconductor is a Silicon Carbide MOSFET that utilizes Trench-Assisted Planar technology. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 20.5 milli-ohms. This AEC-Q101 qualified MOSFET integrates a body diode with low forward voltage and low reverse recovery charge. It has an electromagnetically optimized design and offers faster and efficient switching.  

This RoHS-compliant MOSFET has a low gate charge and is designed with features that enable ease of paralleling without any thermal runaway. It is available in a surface-mount package that measures 9.70 x 11.48 x 2.15 mm and is suitable for xEV - OBC and DC-DC, solar/PV, EV fast charging infrastructure, energy storage system, uninterruptible power supply, server and telecom power supply, class D amplifiers and motor control applications.