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PHB29N08T

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PHB29N08T Image

The PHB29N08T from Nexperia is a MOSFET with Continous Drain Current 19.2 to 27 A, Drain Source Resistance 10 to 120 Milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.1 to 5.4 V. Tags: Surface Mount. More details for PHB29N08T can be seen below.

Product Specifications

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Product Details

  • Part Number
    PHB29N08T
  • Manufacturer
    Nexperia
  • Description
    75 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19.2 to 27 A
  • Drain Source Resistance
    10 to 120 Milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.1 to 5.4 V
  • Gate Charge
    19 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Industrial motor control

Technical Documents
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