The PMPB14XPZ from Nexperia is a P-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over -12 V, a gate-source voltage of up to 8 V, and a drain-source on-resistance of 14 milli-ohms. This power MOSFET has a continuous drain current of up to -12.7 A and power dissipation of less than 15.6 W. It is designed using Trench MOSFET technology and requires low threshold voltage, resulting in improved current handling capabilities. This RoHS-Compliant MOSFET is provided with an exposed drain pad for excellent thermal conduction and includes side wettable flanks to support optical solder inspection. It is available in a surface-mount package that measures 2 x 2 x 0.65 mm and is ideal for charging switches for portable devices, DC-to-DC converters, power management in battery-driven portable devices, hard disk, and computing power management applications.