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PMPB29XPE

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PMPB29XPE Image

The PMPB29XPE from Nexperia is a MOSFET with Continous Drain Current -5 to -3.2 A, Drain Source Resistance 28 to 48 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.9 to -0.47 V. Tags: Surface Mount. More details for PMPB29XPE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB29XPE
  • Manufacturer
    Nexperia
  • Description
    -12 to 12 V, 30 to 45 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5 to -3.2 A
  • Drain Source Resistance
    28 to 48 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.9 to -0.47 V
  • Gate Charge
    30 to 45 nC
  • Power Dissipation
    1.7 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT1220
  • Applications
    Charging switch for portable devices, DC-to-DC converters, Power management in battery-driven portables, Hard disk and computing power management

Technical Documents
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