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PMPB55ENEA

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The PMPB55ENEA from Nexperia is a MOSFET with Continous Drain Current 2.5 to 4 A, Drain Source Resistance 42 to 106 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for PMPB55ENEA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PMPB55ENEA
  • Manufacturer
    Nexperia
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.5 to 4 A
  • Drain Source Resistance
    42 to 106 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    7.5 to 12 nC
  • Power Dissipation
    15.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT1220
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
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