1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PMV60ENEA

PMV60ENEA

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PMV60ENEA Image

The PMV60ENEA from Nexperia is a MOSFET with Continous Drain Current 2.1 to 3 A, Drain Source Resistance 60 to 143 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for PMV60ENEA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMV60ENEA
  • Manufacturer
    Nexperia
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.1 to 3 A
  • Drain Source Resistance
    60 to 143 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    3.6 to 5 nC
  • Power Dissipation
    0.615 to 7.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products