PMZB200UNE

Note : Your request will be directed to Nexperia.

PMZB200UNE Image

The PMZB200UNE from Nexperia is a MOSFET with Continous Drain Current 0.9 to 1.4 A, Drain Source Resistance 210 to 490 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.45 to 0.95 V. Tags: Surface Mount. More details for PMZB200UNE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PMZB200UNE
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 1.6 to 2.7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.9 to 1.4 A
  • Drain Source Resistance
    210 to 490 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.45 to 0.95 V
  • Gate Charge
    1.6 to 2.7 nC
  • Power Dissipation
    0.35 to 6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT883B
  • Applications
    Relay driver, High-speed line driver, Low-side loadswitch, Switching circuits

Technical Documents

Latest MOSFETs

View more products