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PSMN013-100YSE

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PSMN013-100YSE Image

The PSMN013-100YSE from Nexperia is a MOSFET with Continous Drain Current 58 to 82 A, Drain Source Resistance 11 to 36 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN013-100YSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN013-100YSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 60 to 75 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 to 82 A
  • Drain Source Resistance
    11 to 36 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    60 to 75 nC
  • Power Dissipation
    238 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Electronic fuse, Hot swap, Load switch, Soft start

Technical Documents
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