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PSMN015-110P

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PSMN015-110P Image

The PSMN015-110P from Nexperia is a MOSFET with Continous Drain Current 60.8 to 75 A, Drain Source Resistance 12 to 40.5 milliohm, Drain Source Breakdown Voltage 110 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.4 V. Tags: Through Hole. More details for PSMN015-110P can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN015-110P
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 90 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60.8 to 75 A
  • Drain Source Resistance
    12 to 40.5 milliohm
  • Drain Source Breakdown Voltage
    110 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.4 V
  • Gate Charge
    90 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Aerospace, Military, Medical
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    DC-to-DC convertors, Switched-mode power supplies

Technical Documents
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