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PSMN057-200P

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PSMN057-200P Image

The PSMN057-200P from Nexperia is a MOSFET with Continous Drain Current 27.5 to 39 A, Drain Source Resistance 41 to 165 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 6 V. Tags: Through Hole. More details for PSMN057-200P can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN057-200P
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 96 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    27.5 to 39 A
  • Drain Source Resistance
    41 to 165 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 6 V
  • Gate Charge
    96 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    DC-to-DC converters, Switched-mode power supplies

Technical Documents
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