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RMP5N50TI

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RMP5N50TI Image

The RMP5N50TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 1350 to 1500 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP5N50TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP5N50TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    1350 to 1500 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    13 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, halogen free

Technical Documents
View details on the manufacturer's website
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