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PSMN069-100YS

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PSMN069-100YS Image

The PSMN069-100YS from Nexperia is a MOSFET with Continous Drain Current 12 to 17 A, Drain Source Resistance 56.6 to 202.7 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 4.7 V. Tags: Surface Mount. More details for PSMN069-100YS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN069-100YS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 14 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 17 A
  • Drain Source Resistance
    56.6 to 202.7 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 4.7 V
  • Gate Charge
    14 nC
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    DC-to-DC converters, Lithium-ion battery protection, Load switching, Motor control, Server power supplies

Technical Documents
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