The PSMN1R0-100CSF from Nexperia is an N-Channel MOSFET that is ideal for battery protection, high-power full and half-bridge configurations, BLDC motor control, and OR-ing applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.04 milli-ohms. This MOSFET has a continuous drain current of 460 A and a power dissipation of less than 1.55 kW. It has a low reverse recovery charge and gate charge × drain-source on-resistence figure of merit (FOM) to achieve high-efficiency switching. This avalanche-rated power MOSFET has an inverted package to provide top-side cooling for enhanced thermal management. It is available in a surface-mount package that measures 12 x 12 x 2.5 mm.