PSMN1R8-30MLH

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PSMN1R8-30MLH Image

The PSMN1R8-30MLH from Nexperia is a MOSFET with Continous Drain Current 110 to 150 A, Drain Source Resistance 1.76 to 5.3 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN1R8-30MLH can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R8-30MLH
  • Manufacturer
    Nexperia
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 to 150 A
  • Drain Source Resistance
    1.76 to 5.3 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    7.7 to 58 nC
  • Power Dissipation
    106 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    LFPAK33
  • Applications
    Synchronous rectification, DC-to-DC converters, High performance & high efficiency server power supply, Motor control, Power ORing

Technical Documents

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