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PSMN1R9-40YSD

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PSMN1R9-40YSD Image

The PSMN1R9-40YSD from Nexperia is a MOSFET with Continous Drain Current 162 to 200 A, Drain Source Resistance 1.6 to 3.7 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for PSMN1R9-40YSD can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R9-40YSD
  • Manufacturer
    Nexperia
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    162 to 200 A
  • Drain Source Resistance
    1.6 to 3.7 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    37 to 57 nC
  • Power Dissipation
    194 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    High-performance synchronous rectification, DC-to-DC converters, High performance and high efficiency server power supply, Brushless DC motor control, Battery protection, Load-switch and eFuse

Technical Documents
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