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PSMN2R6-60PS

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PSMN2R6-60PS Image

The PSMN2R6-60PS from Nexperia is a MOSFET with Continous Drain Current 150 A, Drain Source Resistance 1.97 to 5.6 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.5 V. Tags: Through Hole. More details for PSMN2R6-60PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN2R6-60PS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 140 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    150 A
  • Drain Source Resistance
    1.97 to 5.6 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.5 V
  • Gate Charge
    140 nC
  • Power Dissipation
    326 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Battery-powered tools, Load switching, Motor control, Uninterruptible power supplies

Technical Documents
View details on the manufacturer's website
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