1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PSMN3R5-80YSF

PSMN3R5-80YSF

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PSMN3R5-80YSF Image

The PSMN3R5-80YSF from Nexperia is a MOSFET with Continous Drain Current 150 A, Drain Source Resistance 2.8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PSMN3R5-80YSF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PSMN3R5-80YSF
  • Manufacturer
    Nexperia
  • Description
    80 V N-channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.3 x 6.2 x 1.1 mm
  • Number of Channels
    Single
  • Continous Drain Current
    150 A
  • Drain Source Resistance
    2.8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    50 to 108 nC
  • Power Dissipation
    294 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LFPAK56E
  • Applications
    Primary side switch, synchronous rectification, BLDC motor control, USB-PD adapters, full-bridge and half-bridge applications, flyback and resonant topologies

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products