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PSMN4R1-60YL

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PSMN4R1-60YL Image

The PSMN4R1-60YL from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 2.9 to 10.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Surface Mount. More details for PSMN4R1-60YL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R1-60YL
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 54.8 to 103 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    2.9 to 10.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    54.8 to 103 nC
  • Power Dissipation
    238 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    On-board DC-DC solutions for server and telecommunications, Secondary-side synchronous rectification in telecommunication applications, Voltage regulator modules (VRM), Point-of-Load (POL) modules, Power delivery for V-core, ASIC, DDR, GPU, VGA and system

Technical Documents
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