1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Nexperia
  6. PSMN4R6-60BS

PSMN4R6-60BS

Download Datasheet Request Quote

Note : Your request will be directed to Nexperia.

PSMN4R6-60BS Image

The PSMN4R6-60BS from Nexperia is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 3.74 to 10.1 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.8 V. Tags: Surface Mount. More details for PSMN4R6-60BS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PSMN4R6-60BS
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 63 to 70.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    3.74 to 10.1 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.8 V
  • Gate Charge
    63 to 70.8 nC
  • Power Dissipation
    211 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    DC-to-DC converters, Load switiching, Motor control, Server power supplies

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products