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TSM05N03CW

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TSM05N03CW Image

The TSM05N03CW from Taiwan Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 46 to 90 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for TSM05N03CW can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM05N03CW
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    46 to 90 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    4.2 to 7 nC
  • Power Dissipation
    1.1 to 3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Load Switch, PA Switch

Technical Documents
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