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PSMN4R8-100BSE

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PSMN4R8-100BSE Image

The PSMN4R8-100BSE from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 4.1 to 13 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.6 V. Tags: Surface Mount. More details for PSMN4R8-100BSE can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R8-100BSE
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 166.9 to 278 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    4.1 to 13 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.6 V
  • Gate Charge
    166.9 to 278 nC
  • Power Dissipation
    405 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Electronic fuse, Hot swap, Load switch, Soft start

Technical Documents
View details on the manufacturer's website
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