The PSMNR67-30YLE from Nexperia is an N-Channel Enhancement Mode ASFET that is ideal for hot swap in 12 - 20 V devices, e-Fuse, DC switch, load switch, and battery protection applications. This MOSFET has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.79 V, and a drain-source on-resistance of less than 0.7 milli-ohms. It has a continuous drain current of up to 365 A and a power dissipation of less than 333 W. This MOSFET consists of a fully optimized safe operating area (SOA) ensuring a superior in-rush and linear mode operation and has low I2R conduction losses that result in higher reliability. It provides a low leakage current and integrates a copper clip for low parasitic inductance and resistance. This RoHS-compliant ASFET is available in a surface-mount package that measures 5.30 x 6.2 mm.
