PSMNR67-30YLEX

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PSMNR67-30YLEX Image

The PSMNR67-30YLE from Nexperia is an N-Channel Enhancement Mode ASFET that is ideal for hot swap in 12 - 20 V devices, e-Fuse, DC switch, load switch, and battery protection applications. This MOSFET has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.79 V, and a drain-source on-resistance of less than 0.7 milli-ohms. It has a continuous drain current of up to 365 A and a power dissipation of less than 333 W. This MOSFET consists of a fully optimized safe operating area (SOA) ensuring a superior in-rush and linear mode operation and has low I2R conduction losses that result in higher reliability. It provides a low leakage current and integrates a copper clip for low parasitic inductance and resistance. This RoHS-compliant ASFET is available in a surface-mount package that measures 5.30 x 6.2 mm.

Product Specifications

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Product Details

  • Part Number
    PSMNR67-30YLEX
  • Manufacturer
    Nexperia
  • Description
    30 V N-Channel Enhancement Mode ASFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.30 x 6.2 mm
  • Number of Channels
    Single
  • Continous Drain Current
    365 A
  • Drain Source Resistance
    0.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.79 V
  • Gate Charge
    52 nC
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT1023
  • Applications
    Hot swap in 12 V - 20 V applications, e-Fuse, DC switch, Load switch, Battery protection

Technical Documents

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