PXN8R3-30QL

Note : Your request will be directed to Nexperia.

PXN8R3-30QL Image

The PXN8R3-30QL from Nexperia is a MOSFET with Continous Drain Current 18.3 A, Drain Source Resistance 7.1 to 12.9 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PXN8R3-30QL can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PXN8R3-30QL
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 5.1 to 15.9 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18.3 A
  • Drain Source Resistance
    7.1 to 12.9 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    5.1 to 15.9 nC
  • Power Dissipation
    1.7 to 12.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MLPAK33
  • Applications
    DC-to-DC converters, Battery management, Low-side load-switch, Switching circuits

Technical Documents

Latest MOSFETs

View more products