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2N7002A

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The 2N7002A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 0.34 A, Drain Source Resistance 1200 to 3000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for 2N7002A can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N7002A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.34 A
  • Drain Source Resistance
    1200 to 3000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.6 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery operated systems, Solid-state relays, Direct logic-level interface TTL/CMOS

Technical Documents
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