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JSM40N10

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The JSM40N10 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 13.8 to 26 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Through Hole. More details for JSM40N10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM40N10
  • Manufacturer
    JSMicro Semiconductor
  • Description
    100 V, 40 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    13.8 to 26 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.5 V
  • Gate Charge
    16.2 nC
  • Switching Speed
    3.8 to 75.5 ns
  • Power Dissipation
    96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 1000 pF

Technical Documents
View details on the manufacturer's website
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