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N3T080MP120D

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The N3T080MP120D from NoMIS Power is a MOSFET with Continous Drain Current 27 to 38 A, Drain Source Resistance 75 to 133 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 3.0 V. Tags: Through Hole. More details for N3T080MP120D can be seen below.

Product Specifications

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Product Details

  • Part Number
    N3T080MP120D
  • Manufacturer
    NoMIS Power
  • Description
    1200 V, 27 to 38 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    27 to 38 A
  • Drain Source Resistance
    75 to 133 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 3.0 V
  • Gate Charge
    53 nC
  • Switching Speed
    5 to 26 ns
  • Power Dissipation
    188 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Motor Drives, Solar PV Inverters, EV On board Chargers, Server Power Supplies, Energy Storage Systems, EV fast Charging Stations, Solid-state power controllers, Uninterruptible Power Supplies
  • Note
    Pulsed Drain Current :- 80 A, Input Capacitance :- 896 pF

Technical Documents
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