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XPH8R316MC

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XPH8R316MC Image

The XPH8R316MC from Toshiba is a MOSFET with Continous Drain Current -90 A, Drain Source Resistance 6.4 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -2.1 V. Tags: Surface Mount. More details for XPH8R316MC can be seen below.

Product Specifications

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Product Details

  • Part Number
    XPH8R316MC
  • Manufacturer
    Toshiba
  • Description
    Silicon P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -90 A
  • Drain Source Resistance
    6.4 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -2.1 V
  • Gate Charge
    222 nC
  • Power Dissipation
    170 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOP
  • Applications
    Automotive, Switching Voltage Regulators, DC-DC Converters, Motor Drivers

Technical Documents
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