The SiZF4800LDT-T1-GE3 from Vishay is a Symmetric Dual N-Channel MOSFET.  It has a drain-source breakdown voltage of 80 V, a gate threshold voltage of 2 V, and a drain-source on-resistance of less than 19 milli-ohms. This MOSFET has a continuous drain current of up to 36 A and a power dissipation of less than 56.8 W. It features high-side and low-side MOSFETs to form an optimized combination for a 50% duty cycle. This RoHS-compliant power MOSFET incorporates flip-chip technology for optimal thermal design. It is available in a surface-mount package that measures 3.3 x 3.3 mm and is ideal for synchronous buck, half-bridge, POL, and telecom DC-DC conversion applications.