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AG096FPD3HRBTL

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The AG096FPD3HRBTL from ROHM Semiconductor is a MOSFET with Continous Drain Current -59 to 59 A, Drain Source Resistance 12.1 to 22.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for AG096FPD3HRBTL can be seen below.

Product Specifications

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Product Details

  • Part Number
    AG096FPD3HRBTL
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, -59 to 59 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -59 to 59 A
  • Drain Source Resistance
    12.1 to 22.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    9.2 to 17.3 nC
  • Switching Speed
    10 to 28 ns
  • Power Dissipation
    76 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (DPAK)
  • Applications
    Automotive Systems
  • Note
    Input Capacitance :- 1110 pF

Technical Documents
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