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FK4B01110L

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The FK4B01110L from Nuvoton Technology is a MOSFET with Continous Drain Current 2.3 to 4.1 A, Drain Source Resistance 47 to 210 milli-ohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1.0 V. Tags: Chip. More details for FK4B01110L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FK4B01110L
  • Manufacturer
    Nuvoton Technology
  • Description
    12 V, 2.3 to 4.1 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.3 to 4.1 A
  • Drain Source Resistance
    47 to 210 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1.0 V
  • Gate Charge
    2.55 nC
  • Switching Speed
    3.0 to 38 ns
  • Power Dissipation
    0.34 to 1.10 W
  • Temperature operating range
    -40 to 85 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Note
    Input Capacitance :- 274 pF

Technical Documents
View details on the manufacturer's website
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