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EFC4K110NUZTDG

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The EFC4K110NUZTDG from onsemi is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 1.6 to 7.4 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.3 V. Tags: Wafer, Chip. More details for EFC4K110NUZTDG can be seen below.

Product Specifications

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Product Details

  • Part Number
    EFC4K110NUZTDG
  • Manufacturer
    onsemi
  • Description
    1.3 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    1.6 to 7.4 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.3 V
  • Gate Charge
    49 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Wafer, Chip
  • Package
    WLCSP-10
  • Applications
    1-2 Cells Lithium-ion Battery Charging and Discharging Switch

Technical Documents
View details on the manufacturer's website
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