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FCMT199N60

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FCMT199N60 Image

The FCMT199N60 from onsemi is a MOSFET with Continous Drain Current 20.2 A, Drain Source Resistance 199 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 V. Tags: Surface Mount. More details for FCMT199N60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCMT199N60
  • Manufacturer
    onsemi
  • Description
    3.5 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20.2 A
  • Drain Source Resistance
    199 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 V
  • Gate Charge
    57 to 74 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-4
  • Applications
    Server and Telecom / Server Power Supplies, Solar Inverter

Technical Documents
View details on the manufacturer's website
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