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FCP650N80Z

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The FCP650N80Z from onsemi is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 650 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 4.5 V. Tags: Through Hole. More details for FCP650N80Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    FCP650N80Z
  • Manufacturer
    onsemi
  • Description
    4.5 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    650 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    27 to 35 nC
  • Power Dissipation
    162 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    LED Lighting, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
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