FDB8441

Note : Your request will be directed to onsemi.

The FDB8441 from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 2.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB8441 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDB8441
  • Manufacturer
    onsemi
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    2.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2

Latest MOSFETs

View more products