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FDB86360-F085

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The FDB86360-F085 from onsemi is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 1.5 to 3.2 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Surface Mount. More details for FDB86360-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB86360-F085
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    1.5 to 3.2 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    253 nC
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Integrated Starter/alternator, Primary Switch for 12V Systems

Technical Documents
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