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FDC6401N

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FDC6401N Image

The FDC6401N from onsemi is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 50 to 106 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for FDC6401N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC6401N
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    50 to 106 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    3.3 to 4.6 nC
  • Power Dissipation
    0.96 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT-23-6
  • Applications
    DC/DC Converter, Battery Management

Technical Documents
View details on the manufacturer's website
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