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FDD306P

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FDD306P Image

The FDD306P from onsemi is a MOSFET with Continous Drain Current -6.7 A, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 V, Gate Charge 15 to 21 nC. Tags: Surface Mount. More details for FDD306P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD306P
  • Manufacturer
    onsemi
  • Description
    -12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.7 A
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    15 to 21 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC-DC Converter

Technical Documents
View details on the manufacturer's website
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